Open to: UK applicants only
Funding provider: Vishay
Subject area: Wide bandgap Power Semiconductor Devices for Power Electronics
Project start date: 1 October 2025 ** (Please see the note below regarding potential later start dates)
Supervisors: Professor Mike Jennings
Aligned programme of study: PhD in Electronic and Electrical Engineering
Mode of study: Full Time
Place of study: Swansea University /Electrical Engineering / CISM
Project description:
The project will work alongside Vishay Intertechnology, which brings together a number of world leaders in power semiconductors and energy conversion to develop solutions for automotive, aerospace, industrial and grid-level power electronics. The purpose is to improve the electric vehicles and the UKs energy infrastructure as we move into a low carbon economy. A paradigm shift in technology will be required in order to cope effectively with an ever-increasing amount of renewable energy being brought online. It is envisaged that other forms of renewable energy, e.g. tidal, solar, could also play a role alongside traditional coal-fired power stations and nuclear energy generation. Revolutionary changes to power conversion are indispensable if these carbon emissions targets are to be met. The objective is to enable a step change in power conversion, transmission and distribution through power electronics based on new materials. At the heart of such systems are power semiconductor devices.
The advantages of wide bandgap materials such as silicon carbide (SiC) and gallium nitride (GaN) for power electronic applications are well documented. Gallium Oxide (Ga2O3) is an emerging oxide semiconductor that has recently been identified as a promising candidate for power electronics and photovoltaics. There are very few reports on this exciting new material. This project is aimed at understanding the fundamental performance limit of Ga2O3 power devices through finite element modelling (electrical and thermal) and device fabrication aimed at both power electronics and photovoltaics. A self-motivated individual who will be based between the Faculty of Science and Engineering will conduct research into the latest gallium oxide power electronic devices. The research work will be undertaken in a state of the art, brand new Centre of Integrative Semiconductor Materials (CISM) cleanroom. Read more details regarding this world-class facility.
Eligibility
UK fee-eligible applicants:
Due to funding restrictions, this scholarship is open to applicants eligible to pay tuition fees at the UK rate only, as defined by UKCISA (Full list of categories for HE in Wales)
PhD: Applicants for PhD must hold an undergraduate degree at 2.1 level (or non-UK equivalent as defined by Swansea University) in Engineering or similar relevant science discipline.
English Language
IELTS 6.5 Overall (5.5+ each comp.) or Swansea University recognised equivalent. For full details of our English Language policy, including certificate validity, please visit this link.
** In exceptional circumstances, and subject to the discretion of the University and/or the relevant funding body, a deferral of offer may be granted to the next available enrolment period. Such deferral will typically not exceed a duration of three calendar months from the originally stipulated commencement date. Please note that only one deferral may be considered, and any such deferral is not guaranteed.
